PART |
Description |
Maker |
K7P801811B-HC27 K7P801811B-HC30 K7P801811B-HC25 K7 |
256Kx36 & 512Kx18 Synchronous Pipelined SRAM 256Kx36 & 512Kx18 Synchronous Pipelined SRAM 256Kx36
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
K7N801849B K7N803649B |
256Kx36 & 512Kx18 Pipelined NtRAM
|
Samsung semiconductor
|
K7N801809B K7N803609B |
256Kx36 & 512Kx18 Pipelined NtRAM
|
Samsung semiconductor
|
GVT7C1356A |
(GVT7xxxx) 256Kx36/512Kx18 Pipelined SRAM With Nobltm Architecture
|
Cypress Semiconductor
|
K7P801811M-H20 K7P801811M-H21 K7P801811M-H25 K7P80 |
256Kx36 & 512Kx18 SRAM 256Kx36 & 512Kx18 SRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
KM736V887 |
256Kx36 & 512Kx18 Synchronous SRAM
|
Samsung semiconductor
|
KM718V987 KM736V887 |
256KX36 & 512KX18 SYNCHRONOUS SRAM
|
Samsung Electronic Samsung semiconductor
|
IDT71P72804 IDT71P72604 IDT71P72604S167BQ IDT71P72 |
1.8V 1M x 18 QDR II PipeLined SRAM 1.8V 512K x 36 QDR II PipeLined SRAM Storage, Cases Tools, Applicator RoHS Compliant: NA Nickel Cadmium Battery Pack; Voltage Rating:12V RoHS Compliant: NA SIGN, FIRE EXTINGUISHER, 100X200MM; RoHS Compliant: NA 18Mb Pipelined QDRII SRAM Burst of 2 35.7流水线推QDRII SRAM的爆 18Mb Pipelined QDRII SRAM Burst of 2 2M X 9 QDR SRAM, 0.5 ns, PBGA165 18Mb Pipelined QDRII SRAM Burst of 2 2M X 9 QDR SRAM, 0.45 ns, PBGA165
|
IDT http:// Integrated Device Technology, Inc.
|
KM736V890 |
256Kx36 Synchronous SRAM(256Kx36位同步静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
KM736S849 |
256Kx36 Synchronous SRAM(256Kx36位同步静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|